Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport

Abstract

In this work the charge-based capacitance measurement (CBCM) method has been extended and calibrated to measure sub-fF level bias-dependent capacitance of single channel silicon nanowire (SNW) transistors. Mixed mode simulations are used to establish the efficacy of the method. Test keys have been carefully designed and fabricated on-chip so that C-V and I-V characteristics are measured on the same single finger SNW device. To our knowledge, this is the first work to report systematic extraction of the mobility of channel carriers from a single channel SNW device at room temperature.