Please use this identifier to cite or link to this item:
https://doi.org/10.1109/ISTDM.2012.6222470
DC Field | Value | |
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dc.title | Strain engineering of ultra-thin silicon-on-insulator structures using ion implant | |
dc.contributor.author | Ding, Y. | |
dc.contributor.author | Cheng, R. | |
dc.contributor.author | Zhou, Q. | |
dc.contributor.author | Du, A. | |
dc.contributor.author | Daval, N. | |
dc.contributor.author | Nguyen, B.-Y. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-06-19T03:28:48Z | |
dc.date.available | 2014-06-19T03:28:48Z | |
dc.date.issued | 2012 | |
dc.identifier.citation | Ding, Y.,Cheng, R.,Zhou, Q.,Du, A.,Daval, N.,Nguyen, B.-Y.,Yeo, Y.-C. (2012). Strain engineering of ultra-thin silicon-on-insulator structures using ion implant. 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings : 86-87. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ISTDM.2012.6222470" target="_blank">https://doi.org/10.1109/ISTDM.2012.6222470</a> | |
dc.identifier.isbn | 9781457718625 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/71873 | |
dc.description.abstract | We report a novel way of introducing strain in Ultra-Thin Body and Buried-Oxide (UTBB) SOI structures by Ge implant into the underlying Si substrate and the formation of localized SiGe regions underneath the buried oxide (BOX) by solid-phase epitaxy (SPE). The localized SiGe regions result in local deformation of the ultra-thin Si. Compressive strain of up to -0.55% and -1.2% were detected by Nano-Beam Diffraction (NBD) at the center and edge of an ultra-thin Si region with 50 nm width between two local SiGe regions. © 2012 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/ISTDM.2012.6222470 | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/ISTDM.2012.6222470 | |
dc.description.sourcetitle | 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings | |
dc.description.page | 86-87 | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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