Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3690463
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dc.titleSpin-bias driven field effect transistor
dc.contributor.authorMa, M.J.
dc.contributor.authorJalil, M.B.A.
dc.contributor.authorSiu, Z.B.
dc.date.accessioned2014-06-19T03:28:30Z
dc.date.available2014-06-19T03:28:30Z
dc.date.issued2012-04-01
dc.identifier.citationMa, M.J., Jalil, M.B.A., Siu, Z.B. (2012-04-01). Spin-bias driven field effect transistor. Journal of Applied Physics 111 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3690463
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/71848
dc.description.abstractWe propose a spin field effect transistor driven by spin biases which are externally generated in the source and drain electrodes. We employed the Keldysh non-equilibrium Green's function formalism to evaluate the charge and spin currents through the transistor, and verify the operation of the transistor as predicted by a semiclassical model. Our calculations show that in the off state, both the charge and spin currents are suppressed. In the on state, the device allows only the spin current to pass through but not charge current, thus potentially improving the energy efficiency of the device. © 2012 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3690463
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.3690463
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume111
dc.description.issue7
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000303282401042
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