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dc.titleRF Passive Devices on Si with Excellent Performance Close to Ideal Devices Designed by Electro-Magnetic Simulation
dc.contributor.authorChin, A.
dc.contributor.authorChan, K.T.
dc.contributor.authorHuang, C.H.
dc.contributor.authorChen, C.
dc.contributor.authorLiang, V.
dc.contributor.authorChen, J.K.
dc.contributor.authorChien, S.C.
dc.contributor.authorSun, S.W.
dc.contributor.authorDuh, D.S.
dc.contributor.authorLin, W.J.
dc.contributor.authorZhu, C.
dc.contributor.authorLi, M.F.
dc.contributor.authorMcAlister, S.P.
dc.contributor.authorKwong, D.-L.
dc.identifier.citationChin, A.,Chan, K.T.,Huang, C.H.,Chen, C.,Liang, V.,Chen, J.K.,Chien, S.C.,Sun, S.W.,Duh, D.S.,Lin, W.J.,Zhu, C.,Li, M.F.,McAlister, S.P.,Kwong, D.-L. (2003). RF Passive Devices on Si with Excellent Performance Close to Ideal Devices Designed by Electro-Magnetic Simulation. Technical Digest - International Electron Devices Meeting : 375-378. ScholarBank@NUS Repository.
dc.description.abstractHigh quality RF inductors, very low loss and noise CPW and microstrip lines, advanced broad and narrow band filters, and ring resonators have been achieved on Si substrates, using an optimized proton implantation process. The RF performance up to 100 GHz is close to that for ideal devices designed by EM simulation for lossless substrates.
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleTechnical Digest - International Electron Devices Meeting
Appears in Collections:Staff Publications

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