Pulsed laser annealing of ultra-shallow junctions in silicon-germanium

Abstract

The effect of laser energy fluence and substrate heating on the annealing of boron-implanted silicongermanium epitaxial layers on silicon was investigated. By making use of the difference in the melting points of silicongermanium and silicon, a process window in the laser energy fluence can be found such that the meltdepth was confined within the silicongermanium. Pre-heating of the substrate to 300°C was done to reduce the laser fluence required and improve the surface morphology. Cross-sectional transmission electron microscopy showed that there were no end-of-range defects due to ion implantation at the silicongermanium/silicon interface after the laser annealing. © 2010 World Scientific Publishing Company.