Please use this identifier to cite or link to this item: https://doi.org/10.1109/TMAG.2002.802858
DC FieldValue
dc.titleMultistate per-cell magnetoresistive random-access memory written at curie point
dc.contributor.authorZheng, Y.K.
dc.contributor.authorWu, Y.H.
dc.contributor.authorGuo, Z.B.
dc.contributor.authorHan, G.C.
dc.contributor.authorLi, K.B.
dc.contributor.authorQiu, J.J.
dc.contributor.authorXie, H.
dc.contributor.authorLuo, P.
dc.date.accessioned2014-06-19T03:19:30Z
dc.date.available2014-06-19T03:19:30Z
dc.date.issued2002-09
dc.identifier.citationZheng, Y.K., Wu, Y.H., Guo, Z.B., Han, G.C., Li, K.B., Qiu, J.J., Xie, H., Luo, P. (2002-09). Multistate per-cell magnetoresistive random-access memory written at curie point. IEEE Transactions on Magnetics 38 (5 I) : 2850-2852. ScholarBank@NUS Repository. https://doi.org/10.1109/TMAG.2002.802858
dc.identifier.issn00189464
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/71070
dc.description.abstractA multistate per-cell magnetoresistive random-access memory (MRAM) that writes data by a thermally assisted technique and reads data using the angular-dependent magnetoresistance is proposed. A hard magnetic layer or pinned ferromagnetic layer (CoFe-IrMn) is used as the recording layer. The free layer serves as the read layer. Before reading, the free layer's magnetization is set to the initial state. For the N states per-cell MRAM, the magnetization angle of the ith state (i = 0 to N - 1) between the free layer and recording layer can be set to be ac os (1 - 2*i/(N - 1)). For example, in the four-state per-cell MRAM, the magnetization angle can be set to be acos(1), acos(1/3), acos(-1/3), and acos(-1), which represent the four states, respectively. More states can be obtained if the signal-to-noise ratio is sufficient. At near Curie point, a small external field can be used to record the signal. In order to verify the idea, a spin-valve giant-magnetoresistance memory cell was fabricated using e-beam lithography and ultrahigh voltage sputtering. A 25-mA heating current and a small external field are enough to assistant the writing process. A four-state per-cell memory is realized by this method.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TMAG.2002.802858
dc.sourceScopus
dc.subjectGiant magnetoresistance
dc.subjectMagnetic tunnel junctions
dc.subjectMagnetoresistive random-access memory
dc.subjectSpin valves
dc.subjectThermal-assistant writing
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TMAG.2002.802858
dc.description.sourcetitleIEEE Transactions on Magnetics
dc.description.volume38
dc.description.issue5 I
dc.description.page2850-2852
dc.description.codenIEMGA
dc.identifier.isiut000178867200316
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

12
checked on Nov 30, 2022

WEB OF SCIENCETM
Citations

11
checked on Nov 30, 2022

Page view(s)

175
checked on Nov 24, 2022

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.