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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/71059
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dc.titleMultiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimization
dc.contributor.authorCho, B.J.
dc.contributor.authorPoon, D.
dc.contributor.authorTan, L.S.
dc.contributor.authorBhat, M.
dc.contributor.authorSee, A.
dc.date.accessioned2014-06-19T03:19:22Z
dc.date.available2014-06-19T03:19:22Z
dc.date.issued2004
dc.identifier.citationCho, B.J.,Poon, D.,Tan, L.S.,Bhat, M.,See, A. (2004). Multiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimization. Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 4 : 22-26. ScholarBank@NUS Repository.
dc.identifier.isbn7309039157
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/71059
dc.description.abstractAdvantages of multiple-pulse Laser Thermal Annealing (LTA) with a moderate energy fluence on preamorphized silicon are described. Re-distribution of laser annealed boron junction during subsequent RTA is also studied. A method to optimize the multiple-pulse LTA condition is proposed. It is also demonstrated that Hall analysis can be used as a quick evaluation tool of the integrity of the junctions.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
dc.description.volume4
dc.description.page22-26
dc.identifier.isiutNOT_IN_WOS
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