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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/71046
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dc.titleMultilevel magnetoresistive random access memory written at curie point
dc.contributor.authorZheng, Y.K.
dc.contributor.authorWu, Y.H.
dc.contributor.authorQiu, J.J.
dc.contributor.authorGuo, Z.B.
dc.contributor.authorHan, G.C.
dc.contributor.authorLi, K.B.
dc.contributor.authorLu, Z.Q.
dc.contributor.authorXie, H.
dc.contributor.authorLuo, P.
dc.date.accessioned2014-06-19T03:19:14Z
dc.date.available2014-06-19T03:19:14Z
dc.date.issued2002
dc.identifier.citationZheng, Y.K.,Wu, Y.H.,Qiu, J.J.,Guo, Z.B.,Han, G.C.,Li, K.B.,Lu, Z.Q.,Xie, H.,Luo, P. (2002). Multilevel magnetoresistive random access memory written at curie point. Digests of the Intermag Conference : BB02-. ScholarBank@NUS Repository.
dc.identifier.issn00746843
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/71046
dc.description.abstractA multilevel magnetoresistive random access memory (MRAM) was proposed that writes data at Curie point and reads data using the angular-dependent magnetoresistance. A hard magnetic layer or pinned ferromagnetic layer was used as the recording layer. The free layer was served as the read layer and the magnetization was set to the initial state.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleDigests of the Intermag Conference
dc.description.pageBB02-
dc.description.codenDICOD
dc.identifier.isiutNOT_IN_WOS
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