Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/71014
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dc.titleModulation of the Ni FUSI workfunction by Yb doping: From midgap to n-type band-edge
dc.contributor.authorYu, H.Y.
dc.contributor.authorChen, J.D.
dc.contributor.authorLi, M.F.
dc.contributor.authorLee, S.J.
dc.contributor.authorKwong, D.L.
dc.contributor.authorVan Dal, M.
dc.contributor.authorKittl, J.A.
dc.contributor.authorLauwers, A.
dc.contributor.authorAugendre, E.
dc.contributor.authorKubicek, S.
dc.contributor.authorZhao, C.
dc.contributor.authorBender, H.
dc.contributor.authorBrijs, B.
dc.contributor.authorGeenen, L.
dc.contributor.authorBenedetti, A.
dc.contributor.authorAbsil, P.
dc.contributor.authorJurczak, M.
dc.contributor.authorBiesemans, S.
dc.date.accessioned2014-06-19T03:18:52Z
dc.date.available2014-06-19T03:18:52Z
dc.date.issued2005
dc.identifier.citationYu, H.Y.,Chen, J.D.,Li, M.F.,Lee, S.J.,Kwong, D.L.,Van Dal, M.,Kittl, J.A.,Lauwers, A.,Augendre, E.,Kubicek, S.,Zhao, C.,Bender, H.,Brijs, B.,Geenen, L.,Benedetti, A.,Absil, P.,Jurczak, M.,Biesemans, S. (2005). Modulation of the Ni FUSI workfunction by Yb doping: From midgap to n-type band-edge. Technical Digest - International Electron Devices Meeting, IEDM 2005 : 630-633. ScholarBank@NUS Repository.
dc.identifier.isbn078039268X
dc.identifier.issn01631918
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/71014
dc.description.abstractThe key result in this work is the experimental demonstration that adding Yb to Ni FUSI allows for tuning the work function (WF) from midgap (NiSi ∼4.72eV) to n-type band-edge (∼4.22eV) on thin SiON, maintaining same EOT. In addition, we did not observe any interface adhesion issues found in other reports when WF is modulated by dopants such as As or Sb. We also show that reliability is similar to Ni FUSI. This is a promising technique for nFET gate electrode formation and enables dual gate CMOS technologies for 45nm and beyond in a manufacturable way. © 2005 IEEE.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleTechnical Digest - International Electron Devices Meeting, IEDM
dc.description.volume2005
dc.description.page630-633
dc.description.codenTDIMD
dc.identifier.isiutNOT_IN_WOS
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