Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.2013413
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dc.titleMetrology solutions for high performance germanium multi-gate field-effect transistors using optical scatterometry
dc.contributor.authorChin, H.-C.
dc.contributor.authorLing, M.-L.
dc.contributor.authorLiu, B.
dc.contributor.authorZhang, X.
dc.contributor.authorLi, J.
dc.contributor.authorLiu, Y.
dc.contributor.authorHu, J.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-06-19T03:17:49Z
dc.date.available2014-06-19T03:17:49Z
dc.date.issued2013
dc.identifier.citationChin, H.-C., Ling, M.-L., Liu, B., Zhang, X., Li, J., Liu, Y., Hu, J., Yeo, Y.-C. (2013). Metrology solutions for high performance germanium multi-gate field-effect transistors using optical scatterometry. Proceedings of SPIE - The International Society for Optical Engineering 8681 : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.2013413
dc.identifier.isbn9780819494634
dc.identifier.issn0277786X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70922
dc.description.abstractIn this work, we report the first demonstration of scatterometry Optical Critical Dimension (OCD) characterization on advanced Ge Multi-Gate Field-Effect Transistor (MuGFET) or FinFET formed on a Germanium-on- Insulator (GeOI) substrate. Two critical process steps in the Ge MuGFET process flow were investigated, i.e. after Ge Fin formation, and after TaN gate stack etching process. All ey process variations in the test structures were successfully monitored by the floating or fitting parameters in the OCD models. In addition, excellent static repeatability, with 3σ lower than 0.12 nm, was also achieved. The measurement results from OCD were also compared with both Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) measurements. Excellent correlation with both SEM and TEM was achieved by employing OCD characterization, confirming scatterometry OCD as a promising metrology technique for next generation multi-gate transistor with an advanced channel material. © 2013 SPIE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1117/12.2013413
dc.sourceScopus
dc.subjectEllipsometry
dc.subjectFinFET
dc.subjectGermanium
dc.subjectOCD
dc.subjectOptical critical dimension
dc.subjectScatterometry
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1117/12.2013413
dc.description.sourcetitleProceedings of SPIE - The International Society for Optical Engineering
dc.description.volume8681
dc.description.page-
dc.description.codenPSISD
dc.identifier.isiut000323182500102
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