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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/70876
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dc.titleMagnetoresistance in exchange-biased IRMN/NIFE/FEMN
dc.contributor.authorGuo, Z.B.
dc.contributor.authorQiu, J.J.
dc.contributor.authorZheng, Y.K.
dc.contributor.authorHan, G.C.
dc.contributor.authorLi, K.B.
dc.contributor.authorLuo, P.
dc.contributor.authorWu, Y.H.
dc.date.accessioned2014-06-19T03:17:18Z
dc.date.available2014-06-19T03:17:18Z
dc.date.issued2002
dc.identifier.citationGuo, Z.B.,Qiu, J.J.,Zheng, Y.K.,Han, G.C.,Li, K.B.,Luo, P.,Wu, Y.H. (2002). Magnetoresistance in exchange-biased IRMN/NIFE/FEMN. Digests of the Intermag Conference : ES10-. ScholarBank@NUS Repository.
dc.identifier.issn00746843
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70876
dc.description.abstractA report on the magnetoresistance in exchange-biased IrMn/NiFe/FeMn was presented. The films were deposited under a magnetic field of 100Oe and then annealed at 250 °C. The representative magnetoresistance behavior of the samples measured with an applied magnetic field parallel to currents as well as exchange bias directions were shown.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentPHYSICS
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleDigests of the Intermag Conference
dc.description.pageES10-
dc.description.codenDICOD
dc.identifier.isiutNOT_IN_WOS
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