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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/70862
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dc.titleMagnetic properties in patterned FeMn/NiFe bilayers with different etching depth
dc.contributor.authorGuo, Z.B.
dc.contributor.authorLi, K.B.
dc.contributor.authorHan, G.C.
dc.contributor.authorLiu, Z.Y.
dc.contributor.authorLuo, P.
dc.contributor.authorWu, Y.H.
dc.date.accessioned2014-06-19T03:17:07Z
dc.date.available2014-06-19T03:17:07Z
dc.date.issued2002
dc.identifier.citationGuo, Z.B.,Li, K.B.,Han, G.C.,Liu, Z.Y.,Luo, P.,Wu, Y.H. (2002). Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth. Digests of the Intermag Conference : ET10-. ScholarBank@NUS Repository.
dc.identifier.issn00746843
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70862
dc.description.abstractMagnetic properties in patterned FeMn/NiFe bilayers with different etching depth were analyzed. The detailed studies of exchange bias and magnetization reversal behaviors in the patterned sample with 3.5nm thick FeMn layer left in etched areas were performed. The origin of the phenomenon was attributed to the presence of antiferromagnetic domain walls by magnetization reversal in patterned sample.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentPHYSICS
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleDigests of the Intermag Conference
dc.description.pageET10-
dc.description.codenDICOD
dc.identifier.isiutNOT_IN_WOS
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