Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.456836
DC FieldValue
dc.titleLaser ablation of Si in water and ambient air
dc.contributor.authorZhu, S.
dc.contributor.authorHong, M.H.
dc.contributor.authorKoh, M.L.
dc.contributor.authorLu, Y.F.
dc.date.accessioned2014-06-19T03:15:51Z
dc.date.available2014-06-19T03:15:51Z
dc.date.issued2002
dc.identifier.citationZhu, S., Hong, M.H., Koh, M.L., Lu, Y.F. (2002). Laser ablation of Si in water and ambient air. Proceedings of SPIE - The International Society for Optical Engineering 4426 : 39-42. ScholarBank@NUS Repository. https://doi.org/10.1117/12.456836
dc.identifier.issn0277786X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70756
dc.description.abstractLaser ablation of Si in ambient air and under water is investigated. It is found that the laser ablation rate of Si varies with the thickness of the water layer above the Si substrates. The laser ablation rate is the most highly enhanced with the water layer of 1.1 mm. It is assumed that the plasma generated in water confinement regime (WCR) with an optimal water layer thickness induces the strongest pressure. This high-pressure, high-temperature plasma results in the high ablation rate. A wide-band microphone is used to detect the audible acoustic wave generated during the laser ablation. The amplitude of the acoustic wave is closely related to the ablation rate. It is found that the first peak-to-peak amplitude of the acoustic wave is the strongest when the water layer thickness is 1.1 mm above the substrate. By proper calibration, acoustic wave detection can be used as a real-time monitoring of the laser ablation.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1117/12.456836
dc.sourceScopus
dc.subjectAcoustic wave
dc.subjectLaser ablation
dc.subjectReal-time monitoring
dc.subjectWater confinement regime
dc.typeConference Paper
dc.contributor.departmentDATA STORAGE INSTITUTE
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1117/12.456836
dc.description.sourcetitleProceedings of SPIE - The International Society for Optical Engineering
dc.description.volume4426
dc.description.page39-42
dc.description.codenPSISD
dc.identifier.isiut000176422100006
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