Please use this identifier to cite or link to this item: https://doi.org/10.1109/TSM.2004.826959
DC FieldValue
dc.titleIntegrated bake/chill module with in situ temperature measurement for photoresist processing
dc.contributor.authorTay, A.
dc.contributor.authorHo, W.-K.
dc.contributor.authorLoh, A.-P.
dc.contributor.authorLim, K.-W.
dc.contributor.authorTan, W.-W.
dc.contributor.authorSchaper, C.D.
dc.date.accessioned2014-06-19T03:14:13Z
dc.date.available2014-06-19T03:14:13Z
dc.date.issued2004-05
dc.identifier.citationTay, A., Ho, W.-K., Loh, A.-P., Lim, K.-W., Tan, W.-W., Schaper, C.D. (2004-05). Integrated bake/chill module with in situ temperature measurement for photoresist processing. IEEE Transactions on Semiconductor Manufacturing 17 (2) : 231-242. ScholarBank@NUS Repository. https://doi.org/10.1109/TSM.2004.826959
dc.identifier.issn08946507
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70617
dc.description.abstractThermal processing of photoresist are critical steps in the microlithography sequence. The postexpose bake (PEB) steps for current DUV chemically amplified resists is especially sensitive to temperature variations. The problem is complicated with increasing wafer size and decreasing feature size. Conventional thermal systems are no longer able to meet these stringent requirements. The reason is that the large thermal mass of conventional hot plates prevents rapid movements in substrate temperature to compensate for real-time errors during transients. The implementation of advanced control systems with conventional technology cannot overcome the inherent operating limitation. An integrated bake/chill module with in situ temperature measurement capability has been developed for the baking of 300-mm silicon wafers. The system provides in situ sensing of the substrate temperature. Real-time closed-loop control of the substrate temperature is thus possible as oppose to conventional open-loop control of the substrate temperature. Experimental results are provided to demonstrate a complete thermal cycle.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TSM.2004.826959
dc.sourceScopus
dc.subject300-mm wafer processing
dc.subjectIn situ temperature measurement
dc.subjectLithography
dc.subjectPhotoresist processing
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TSM.2004.826959
dc.description.sourcetitleIEEE Transactions on Semiconductor Manufacturing
dc.description.volume17
dc.description.issue2
dc.description.page231-242
dc.description.codenITSME
dc.identifier.isiut000221313700019
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