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Please use this identifier to cite or link to this item: https://doi.org/10.1109/INDIN.2006.275769
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dc.titleIn-situ monitoring of photoresist thickness contour
dc.contributor.authorHo, W.K.
dc.contributor.authorWu, X.
dc.contributor.authorTay, A.
dc.contributor.authorChen, X.
dc.date.accessioned2014-06-19T03:14:09Z
dc.date.available2014-06-19T03:14:09Z
dc.date.issued2007
dc.identifier.citationHo, W.K.,Wu, X.,Tay, A.,Chen, X. (2007). In-situ monitoring of photoresist thickness contour. 2006 IEEE International Conference on Industrial Informatics, INDIN'06 : 1091-1095. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/INDIN.2006.275769" target="_blank">https://doi.org/10.1109/INDIN.2006.275769</a>
dc.identifier.isbn0780397010
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70611
dc.description.abstractIn microelectronics processing, coating of photoresist is a common process. It is important to ensure the uniformity of the photoresist thickness across the wafer. In this paper, we propose an in-situ monitoring system. In the setup, a spectrometer is used to measure the photoresist thickness contour on the wafer after the spin-coat step or edge-bead removal step. The experimental results are compared with off-line ellipsometer measurements. The worst-case error is experimentally found to be less than 2%. © 2006 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/INDIN.2006.275769
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/INDIN.2006.275769
dc.description.sourcetitle2006 IEEE International Conference on Industrial Informatics, INDIN'06
dc.description.page1091-1095
dc.identifier.isiutNOT_IN_WOS
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