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Please use this identifier to cite or link to this item: https://doi.org/10.1109/EDSSC.2007.4450109
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dc.titleImpact of metal dummy fills on the performance of CMOS inductors
dc.contributor.authorNan, L.
dc.contributor.authorMouthaan, K.
dc.contributor.authorXiong, Y.-Z.
dc.contributor.authorShi, J.
dc.contributor.authorRustagi, S.C.
dc.contributor.authorOoi, B.-L.
dc.date.accessioned2014-06-19T03:13:16Z
dc.date.available2014-06-19T03:13:16Z
dc.date.issued2007
dc.identifier.citationNan, L.,Mouthaan, K.,Xiong, Y.-Z.,Shi, J.,Rustagi, S.C.,Ooi, B.-L. (2007). Impact of metal dummy fills on the performance of CMOS inductors. IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 : 251-254. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/EDSSC.2007.4450109" target="_blank">https://doi.org/10.1109/EDSSC.2007.4450109</a>
dc.identifier.isbn1424406374
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70536
dc.description.abstractTo meet the metal density and uniformity requirement, metal dummy fills are inserted on all metallization layers in modern CMOS technologies. These metal dummy fills can have a detrimental effect on the performance of IC components. In this paper, the impact of metal dummy fills on the equivalent circuit and the performance of on-chip spiral inductors is presented based on experimental data. A simple closed-form formula is further provided to account for the effect of metal dummy fills to update the model for inductors in the conventional environment without metal dummy fills. © 2007 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/EDSSC.2007.4450109
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/EDSSC.2007.4450109
dc.description.sourcetitleIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
dc.description.page251-254
dc.identifier.isiutNOT_IN_WOS
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