Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2007.4418900
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dc.titleImpact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swing
dc.contributor.authorToh, E.-H.
dc.contributor.authorWang, G.H.
dc.contributor.authorZhu, M.
dc.contributor.authorShen, C.
dc.contributor.authorChan, L.
dc.contributor.authorLo, G.-Q.
dc.contributor.authorTung, C.-H.
dc.contributor.authorSylvester, D.
dc.contributor.authorHeng, C.-H.
dc.contributor.authorSamudra, G.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-06-19T03:13:13Z
dc.date.available2014-06-19T03:13:13Z
dc.date.issued2007
dc.identifier.citationToh, E.-H., Wang, G.H., Zhu, M., Shen, C., Chan, L., Lo, G.-Q., Tung, C.-H., Sylvester, D., Heng, C.-H., Samudra, G., Yeo, Y.-C. (2007). Impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swing. Technical Digest - International Electron Devices Meeting, IEDM : 195-198. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2007.4418900
dc.identifier.issn01631918
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70531
dc.description.abstractWe report the first demonstration of an Impact Ionization Nanowire Multiple-gate Field-Effect Transistor (I-MuGFET or I-FinFET). Excellent subthreshold swing of sub-5 mV/decade at room temperature was achieved. The multiple-gate structure enhances the impact ionization rate in the fin or nanowire channel, reduces the breakdown voltage and improves device performance. A Silicon-Germanium (SiGe) Impact Ionization Region (I-Region) is integrated on a Si or SiGe nanowire to enhance performance and reduce the breakdown voltage. A record low breakdown voltage of -4.75 V is achieved for SiGe nanowire device. Complementary pair of I-FinFETs were realized. The lower electron and hole impact-ionization threshold energy of SiGe greatly enhances the drive current of n- and p-channel devices by 3 and 2.4 folds, respectively. © 2007 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/IEDM.2007.4418900
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentNUS NANOSCIENCE & NANOTECH INITIATIVE
dc.description.doi10.1109/IEDM.2007.4418900
dc.description.sourcetitleTechnical Digest - International Electron Devices Meeting, IEDM
dc.description.page195-198
dc.description.codenTDIMD
dc.identifier.isiut000259347800042
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