Please use this identifier to cite or link to this item:
DC FieldValue
dc.titleFabrication of embedded media by etching of self-assembled mask
dc.contributor.authorVerma, L.K.
dc.contributor.authorNg, V.
dc.identifier.citationVerma, L.K.,Ng, V. (2004). Fabrication of embedded media by etching of self-assembled mask. 2004 4th IEEE Conference on Nanotechnology : 62-64. ScholarBank@NUS Repository.
dc.description.abstractArgon ion etching assisted by CF4 gas using a mask from self assembly of polystyrene spheres was performed on Si (100) substrates. The etch process is calibrated for the spheres to achieve a good etch rate while maintaining the spherical geometry of the PS spheres during etching. Grooves with vertical side walls and depth of 90 nm were successfully formed. Triangular shaped grooves of mean size 110nm were etched. NiFe was deposited into the groves in Si substrate to form embedded media. Scanning electron microscopy and magnetic force microscopy are used to study the etching profiles and magnetic domain distribution of dots. © 2004 IEEE.
dc.subjectDry etching
dc.subjectMagnetic nanostructures
dc.subjectSelf assembly
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitle2004 4th IEEE Conference on Nanotechnology
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.