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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/70090
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dc.titleEffect of transmission line pulsing of interconnects investigated using combined low-frequency noise and resistance measurements
dc.contributor.authorChu, L.W.
dc.contributor.authorChim, W.K.
dc.contributor.authorPey, K.L.
dc.contributor.authorSee, A.
dc.date.accessioned2014-06-19T03:08:07Z
dc.date.available2014-06-19T03:08:07Z
dc.date.issued2001
dc.identifier.citationChu, L.W.,Chim, W.K.,Pey, K.L.,See, A. (2001). Effect of transmission line pulsing of interconnects investigated using combined low-frequency noise and resistance measurements. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 97-102. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70090
dc.description.abstractA novel technique of combining 1/f noise and resistance measurements for characterizing electrostatic discharge (ESD) induced voiding damage in aluminium interconnects is reported. The ESD stress was performed using the transmission line pulsing (TLP) technique. Samples of different linewidths, with and without an overlying passivation, were studied.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.sourcetitleProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
dc.description.page97-102
dc.identifier.isiutNOT_IN_WOS
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