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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/70068
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dc.titleEffect of current distribution on the reliability of multi-terminal Cu dual-damascene interconnect trees
dc.contributor.authorGan, C.L.
dc.contributor.authorThompson, C.V.
dc.contributor.authorPey, K.L.
dc.contributor.authorChoi, W.K.
dc.contributor.authorChang, C.W.
dc.contributor.authorGuo, Q.
dc.date.accessioned2014-06-19T03:07:51Z
dc.date.available2014-06-19T03:07:51Z
dc.date.issued2003
dc.identifier.citationGan, C.L.,Thompson, C.V.,Pey, K.L.,Choi, W.K.,Chang, C.W.,Guo, Q. (2003). Effect of current distribution on the reliability of multi-terminal Cu dual-damascene interconnect trees. Annual Proceedings - Reliability Physics (Symposium) : 594-595. ScholarBank@NUS Repository.
dc.identifier.issn00999512
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70068
dc.description.abstractWhile the reliability of a dual-damascene via is independent of the number of segments connected to it, it is strongly dependent on the distribution of current among the segments. The most highly stressed segments are not always the least reliable. This behavior for Cu is different than for A1.
dc.sourceScopus
dc.subjectCopper metallization
dc.subjectElectromigration
dc.subjectInterconnect tree
dc.subjectReliability
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleAnnual Proceedings - Reliability Physics (Symposium)
dc.description.page594-595
dc.description.codenARLPB
dc.identifier.isiutNOT_IN_WOS
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