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Please use this identifier to cite or link to this item: https://doi.org/10.1109/IPFA.2008.4588168
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dc.titleEffect of bonding pressure on the bond strengths of low temperature Ag-In bonds
dc.contributor.authorMade, R.I.
dc.contributor.authorGan, C.L.
dc.contributor.authorLee, C.
dc.contributor.authorYan, L.
dc.contributor.authorYu, A.
dc.contributor.authorYoon, S.W.
dc.date.accessioned2014-06-19T03:07:50Z
dc.date.available2014-06-19T03:07:50Z
dc.date.issued2008
dc.identifier.citationMade, R.I.,Gan, C.L.,Lee, C.,Yan, L.,Yu, A.,Yoon, S.W. (2008). Effect of bonding pressure on the bond strengths of low temperature Ag-In bonds. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IPFA.2008.4588168" target="_blank">https://doi.org/10.1109/IPFA.2008.4588168</a>
dc.identifier.isbn1424420393
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70067
dc.description.abstractBonding of multiple indium-silver intermediate layers facilitates precise control of the formed alloy composition and the joint thickness. The bonding temperature and post-bonding re-melting temperature can thus be easily designed by controlling the multilayer materials and structure thicknesses. However, joining different materials involves the formation of intermetallics, which is known to be brittle. In this paper, In-Ag intermetallic phase formation under different applied pressure is studied.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/IPFA.2008.4588168
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/IPFA.2008.4588168
dc.description.sourcetitleProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
dc.description.page-
dc.identifier.isiutNOT_IN_WOS
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