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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2834408
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dc.titleDual-synthetic antiferromagnet and its effect on giant magnetoresistance
dc.contributor.authorBao, J.
dc.contributor.authorXu, X.-G.
dc.contributor.authorLiu, Q.-L.
dc.contributor.authorPan, L.-Q.
dc.contributor.authorYu, G.-H.
dc.contributor.authorJiang, Y.
dc.contributor.authorJalil, M.B.A.
dc.date.accessioned2014-06-19T03:07:23Z
dc.date.available2014-06-19T03:07:23Z
dc.date.issued2008
dc.identifier.citationBao, J., Xu, X.-G., Liu, Q.-L., Pan, L.-Q., Yu, G.-H., Jiang, Y., Jalil, M.B.A. (2008). Dual-synthetic antiferromagnet and its effect on giant magnetoresistance. Journal of Applied Physics 103 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2834408
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70029
dc.description.abstractA dual-synthetic antiferromagnet (DSyAF) structure of Co90 Fe10 Ru Co90 Fe10 Ru Co90 Fe10 is studied. Compared with a conventional synthetic antiferromagnet (SyAF) of Co90 Fe10 Ru Co90 Fe10, the DSyAF has higher saturation magnetic field and lower saturation magnetization. Moreover, the DSyAF shows good thermal stability after annealing at 300 °C for 1 h. We also fabricate current-in-plane spin valves with the SyAF or the DSyAF as the pinned layer and demonstrate that using the DSyAF as a pinned layer enhances giant magnetoresistance at room temperature. © 2008 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2834408
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.2834408
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume103
dc.description.issue7
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000255043200739
Appears in Collections:Staff Publications

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