Please use this identifier to cite or link to this item: https://doi.org/10.1109/IRPS.2010.5488819
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dc.titleDetermination of the local electric field strength by energy dispersive Photon Emission Microscopy
dc.contributor.authorGeinzer, T.
dc.contributor.authorHeiderhoff, R.
dc.contributor.authorPhang, J.C.H.
dc.contributor.authorBalk, L.J.
dc.date.accessioned2014-06-19T03:05:55Z
dc.date.available2014-06-19T03:05:55Z
dc.date.issued2010
dc.identifier.citationGeinzer, T., Heiderhoff, R., Phang, J.C.H., Balk, L.J. (2010). Determination of the local electric field strength by energy dispersive Photon Emission Microscopy. IEEE International Reliability Physics Symposium Proceedings : 271-276. ScholarBank@NUS Repository. https://doi.org/10.1109/IRPS.2010.5488819
dc.identifier.isbn9781424454310
dc.identifier.issn15417026
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/69897
dc.description.abstractEnergy-dispersive Photon Emission Microscopy (PEM) allows the local electron temperature distribution to be characterized with high accuracy and sensitivity. The suitability and potential of this new technique for failure analysis and reliability investigation of semiconductor devices are demonstrated by the spatially resolved analysis of non-uniform breakdowns. With state-of-the-art devices in nanometer dimensions the charge carrier transport is analyzed in order to determine the electric field strength distribution. © 2010 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/IRPS.2010.5488819
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/IRPS.2010.5488819
dc.description.sourcetitleIEEE International Reliability Physics Symposium Proceedings
dc.description.page271-276
dc.identifier.isiut000287515600043
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