Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/69599
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dc.titleChemical analysis of etching residues in metal gate stack for CMOS process
dc.contributor.authorWan, S.H.
dc.contributor.authorHui, H.N.
dc.contributor.authorWon, J.Y.
dc.contributor.authorBliznetsov, V.
dc.date.accessioned2014-06-19T03:02:30Z
dc.date.available2014-06-19T03:02:30Z
dc.date.issued2006
dc.identifier.citationWan, S.H.,Hui, H.N.,Won, J.Y.,Bliznetsov, V. (2006). Chemical analysis of etching residues in metal gate stack for CMOS process. Studies in Surface Science and Catalysis 159 : 365-368. ScholarBank@NUS Repository.
dc.identifier.issn01672991
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/69599
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleStudies in Surface Science and Catalysis
dc.description.volume159
dc.description.page365-368
dc.description.codenSSCTD
dc.identifier.isiutNOT_IN_WOS
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