Chemical analysis of etching residues in metal gate stack for CMOS process

Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/69599

DC Field	Value
dc.title	Chemical analysis of etching residues in metal gate stack for CMOS process
dc.contributor.author	Wan, S.H.
dc.contributor.author	Hui, H.N.
dc.contributor.author	Won, J.Y.
dc.contributor.author	Bliznetsov, V.
dc.date.accessioned	2014-06-19T03:02:30Z
dc.date.available	2014-06-19T03:02:30Z
dc.date.issued	2006
dc.identifier.citation	Wan, S.H.,Hui, H.N.,Won, J.Y.,Bliznetsov, V. (2006). Chemical analysis of etching residues in metal gate stack for CMOS process. Studies in Surface Science and Catalysis 159 : 365-368. ScholarBank@NUS Repository.
dc.identifier.issn	01672991
dc.identifier.uri	http://scholarbank.nus.edu.sg/handle/10635/69599
dc.source	Scopus
dc.type	Conference Paper
dc.contributor.department	ELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitle	Studies in Surface Science and Catalysis
dc.description.volume	159
dc.description.page	365-368
dc.description.coden	SSCTD
dc.identifier.isiut	NOT_IN_WOS
Appears in Collections:	Staff Publications

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