Please use this identifier to cite or link to this item: https://doi.org/10.1109/FREQ.2008.4623075
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dc.titleCharacterization of SOI Lamé-mode square resonators
dc.contributor.authorKhine, L.
dc.contributor.authorPalaniapan, M.
dc.contributor.authorShao, L.
dc.contributor.authorWong, W.-K.
dc.date.accessioned2014-06-19T03:02:24Z
dc.date.available2014-06-19T03:02:24Z
dc.date.issued2008
dc.identifier.citationKhine, L., Palaniapan, M., Shao, L., Wong, W.-K. (2008). Characterization of SOI Lamé-mode square resonators. 2008 IEEE International Frequency Control Symposium, FCS : 625-628. ScholarBank@NUS Repository. https://doi.org/10.1109/FREQ.2008.4623075
dc.identifier.isbn9781424417957
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/69591
dc.description.abstractCharacterization of Lamé-mode square resonators with different straight-beam anchor lengths, structural layer thickness, and number of anchor support reveals that there is likely an optimal range of anchor designs that provide high quality factor (Q) above one million, along with low motional resistance. Shorter anchor length restricts resonator vibrations and motional resistance could be increased by 3.5 times compared to resonators with longer anchor length. Two-anchor support design is able to achieve higher Q's but results in higher motional resistance compared to four-anchor support. When structural thickness is reduced from 25μm to 10μm, Q gets degraded but still maintained above one million. ©2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/FREQ.2008.4623075
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/FREQ.2008.4623075
dc.description.sourcetitle2008 IEEE International Frequency Control Symposium, FCS
dc.description.page625-628
dc.identifier.isiut000261285400130
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