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Please use this identifier to cite or link to this item: https://doi.org/10.1109/PVSC.2011.6185850
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dc.titleCharacterization of hydrogenated amorphous silicon thin-film solar cell defects using optical beam induced current imaging and focused ion beam cross-sectioning technique
dc.contributor.authorMeng, L.
dc.contributor.authorSteen, S.
dc.contributor.authorKoo, C.K.
dc.contributor.authorBhatia, C.S.
dc.contributor.authorStreet, A.G.
dc.contributor.authorJoshi, P.
dc.contributor.authorKim, Y.H.
dc.contributor.authorPhang, J.C.H.
dc.date.accessioned2014-06-19T03:02:21Z
dc.date.available2014-06-19T03:02:21Z
dc.date.issued2011
dc.identifier.citationMeng, L.,Steen, S.,Koo, C.K.,Bhatia, C.S.,Street, A.G.,Joshi, P.,Kim, Y.H.,Phang, J.C.H. (2011). Characterization of hydrogenated amorphous silicon thin-film solar cell defects using optical beam induced current imaging and focused ion beam cross-sectioning technique. Conference Record of the IEEE Photovoltaic Specialists Conference : 000079-000084. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/PVSC.2011.6185850" target="_blank">https://doi.org/10.1109/PVSC.2011.6185850</a>
dc.identifier.isbn9781424499656
dc.identifier.issn01608371
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/69586
dc.description.abstractDefects in hydrogenated amorphous silicon (a-Si:H) thin-film solar cells were localized by optical beam induced current (OBIC) imaging and then characterized using focused ion beam (FIB) cross-sectioning technique. It was found that nano-voids in the active silicon layer and transparent conductive oxide underneath the back electrode were the main causes of OBIC signal reduction. © 2011 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/PVSC.2011.6185850
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/PVSC.2011.6185850
dc.description.sourcetitleConference Record of the IEEE Photovoltaic Specialists Conference
dc.description.page000079-000084
dc.description.codenCRCND
dc.identifier.isiutNOT_IN_WOS
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