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Please use this identifier to cite or link to this item: https://doi.org/10.1109/IRPS.2011.5784577
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dc.titleBackside reflectance modulation of microscale metal interconnects
dc.contributor.authorTeo, J.K.J.
dc.contributor.authorChua, C.M.
dc.contributor.authorKoh, L.S.
dc.contributor.authorPhang, J.C.H.
dc.date.accessioned2014-06-19T03:01:18Z
dc.date.available2014-06-19T03:01:18Z
dc.date.issued2011
dc.identifier.citationTeo, J.K.J.,Chua, C.M.,Koh, L.S.,Phang, J.C.H. (2011). Backside reflectance modulation of microscale metal interconnects. IEEE International Reliability Physics Symposium Proceedings : FA.4.1-FA.4.6. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IRPS.2011.5784577" target="_blank">https://doi.org/10.1109/IRPS.2011.5784577</a>
dc.identifier.isbn9781424491117
dc.identifier.issn15417026
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/69489
dc.description.abstractThe variation of backside reflectance modulation effects on metal line samples at different electrical bias and silicon backside thicknesses is investigated. Negative reflected intensity modulation is observed with temperature increase which is one to two orders of magnitude higher than published results. A backside reflectance model is developed to explain the experimental results. © 2011 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/IRPS.2011.5784577
dc.sourceScopus
dc.subjectlaser reflectance
dc.subjectmetal interconnect
dc.subjectsubstrate thickness
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/IRPS.2011.5784577
dc.description.sourcetitleIEEE International Reliability Physics Symposium Proceedings
dc.description.pageFA.4.1-FA.4.6
dc.identifier.isiutNOT_IN_WOS
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