Analytical extraction of extrinsic and intrinsic FET parameters

Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/69413

DC Field	Value
dc.title	Analytical extraction of extrinsic and intrinsic FET parameters
dc.contributor.author	Ooi, B.L.
dc.contributor.author	Zhong, Z.
dc.contributor.author	Leong, M.-S.
dc.date.accessioned	2014-06-19T03:00:23Z
dc.date.available	2014-06-19T03:00:23Z
dc.date.issued	2009-01
dc.identifier.citation	Ooi, B.L.,Zhong, Z.,Leong, M.-S. (2009-01). Analytical extraction of extrinsic and intrinsic FET parameters. IEEE Transactions on Microwave Theory and Techniques 57 (1) : 254-261. ScholarBank@NUS Repository.
dc.identifier.issn	00189480
dc.identifier.uri	http://scholarbank.nus.edu.sg/handle/10635/69413
dc.description.abstract	The least squares solution for the entire small-signal equivalent circuit is itself a formidable task. In this paper, a systematic approach comprising the total and conventional least squares method in analytically obtaining the small-signal field-effect transistor (FET) parameters values is introduced. The proposed method eliminates the conventional "cold FET" and "hot FET" modeling constraints and allows an ease in inline process tracking. © 2009 IEEE.
dc.source	Scopus
dc.subject	Field-effect transistor (FET)
dc.subject	Small-signal equivalent circuit
dc.type	Conference Paper
dc.contributor.department	ELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitle	IEEE Transactions on Microwave Theory and Techniques
dc.description.volume	57
dc.description.issue	1
dc.description.page	254-261
dc.description.coden	IETMA
dc.identifier.isiut	NOT_IN_WOS
Appears in Collections:	Staff Publications

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