Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/69397
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dc.titleAnalysis of leakage mechanisms and leakage pathways in intra-level Cu interconnects
dc.contributor.authorNgwan, V.C.
dc.contributor.authorZhu, C.
dc.contributor.authorKrishnamoorthy, A.
dc.date.accessioned2014-06-19T03:00:12Z
dc.date.available2014-06-19T03:00:12Z
dc.date.issued2004
dc.identifier.citationNgwan, V.C.,Zhu, C.,Krishnamoorthy, A. (2004). Analysis of leakage mechanisms and leakage pathways in intra-level Cu interconnects. Annual Proceedings - Reliability Physics (Symposium) : 571-572. ScholarBank@NUS Repository.
dc.identifier.issn00999512
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/69397
dc.description.abstractUsing the carrier transport modeling in intra-level Cu interconnects, we are able to distinguish the dominant leakage mechanisms: Ohmic, Poole-Frenkel and Schottky mechanisms. In addition, the probable dominant leakage pathways: bulk-induced, barrier layer-induced or their interfaces-induced pathways are deduced to explain the leakage behavior in multilayer interconnects.
dc.sourceScopus
dc.subjectInterconnects
dc.subjectLOW-k and Copper
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleAnnual Proceedings - Reliability Physics (Symposium)
dc.description.page571-572
dc.description.codenARLPB
dc.identifier.isiutNOT_IN_WOS
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