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Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICSICT.2006.306263
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dc.titleAdvanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices
dc.contributor.authorYu, H.Y.
dc.contributor.authorLi, M.F.
dc.contributor.authorLauwers, A.
dc.contributor.authorKittl, J.A.
dc.contributor.authorSinganamalla, R.
dc.contributor.authorVeloso, A.
dc.contributor.authorHoffmann, T.
dc.contributor.authorDe Meyer, K.
dc.contributor.authorJurczak, M.
dc.contributor.authorAbsil, P.
dc.contributor.authorBiesemans, S.
dc.date.accessioned2014-06-19T02:58:26Z
dc.date.available2014-06-19T02:58:26Z
dc.date.issued2007
dc.identifier.citationYu, H.Y.,Li, M.F.,Lauwers, A.,Kittl, J.A.,Singanamalla, R.,Veloso, A.,Hoffmann, T.,De Meyer, K.,Jurczak, M.,Absil, P.,Biesemans, S. (2007). Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings : 404-407. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ICSICT.2006.306263" target="_blank">https://doi.org/10.1109/ICSICT.2006.306263</a>
dc.identifier.isbn1424401615
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/69242
dc.description.abstractIn this paper, we present a study on the advanced Ni-based FUlIy SIlicidation (FUSI) technology, which could satisfy various technology requirements of sub-45nm CMOS node, from the device Vt point of view. For n-FETs, adding Yb to Ni FUSI allows for tuning the work function (WF) from midgap (NiSi ∼4.72eV) to near n-type band-edge (∼4.22eV) on thin SiON. On the pFET, we study the effect of Al and Pt on Ni-rich FUSI and integrate it with a SiGe-channel. We also report on the use of a Ni FUlIy GErmano-SIlicide (FUGESI) as a metal gate in pFETs. © 2006 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/ICSICT.2006.306263
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/ICSICT.2006.306263
dc.description.sourcetitleICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
dc.description.page404-407
dc.identifier.isiutNOT_IN_WOS
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