Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.egypro.2011.06.131
DC FieldValue
dc.titleAdvanced loss analysis method for silicon wafer solar cells
dc.contributor.authorAberle, A.G.
dc.contributor.authorZhang, W.
dc.contributor.authorHoex, B.
dc.date.accessioned2014-06-19T02:58:24Z
dc.date.available2014-06-19T02:58:24Z
dc.date.issued2011
dc.identifier.citationAberle, A.G., Zhang, W., Hoex, B. (2011). Advanced loss analysis method for silicon wafer solar cells. Energy Procedia 8 : 244-249. ScholarBank@NUS Repository. https://doi.org/10.1016/j.egypro.2011.06.131
dc.identifier.issn18766102
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/69240
dc.description.abstractAn advanced loss analysis method for silicon (Si) wafer solar cells is introduced. The capabilities of the method are exemplified for an 18.1% efficient p-type Czochralski-grown monocrystalline Si wafer solar cell. The method is based on a set of high-precision measurements, including light and dark current-voltage, hemispherical reflectance, quantum efficiency, and photo- and electroluminescence intensity images. The analysis provides a detailed quantification (in W/cm2) of the seven main power loss mechanisms in a silicon wafer solar cell: Front metal shading, front surface reflectance in the active cell area, front surface escape of light, series resistance, shunt resistance, non-perfect active-area internal quantum efficiency, and the forward-bias current at the one-sun maximum power point. The presented loss analysis method is entirely based on measured parameters and does not involve any curve fitting or computer modelling of the solar cell. The only assumptions behind the quantification of the various loss mechanisms are that the cell can be described with a one-diode equivalent circuit model and that it obeys the superposition principle. © 2011 Published by Elsevier Ltd.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.egypro.2011.06.131
dc.sourceScopus
dc.subjectLoss analysis
dc.subjectLuminescence
dc.subjectQuantum efficiency
dc.subjectReflectance
dc.subjectSilicon wafer solar cells
dc.subjectSuperposition principle
dc.typeConference Paper
dc.contributor.departmentSOLAR ENERGY RESEARCH INST OF S'PORE
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.egypro.2011.06.131
dc.description.sourcetitleEnergy Procedia
dc.description.volume8
dc.description.page244-249
dc.identifier.isiut000298302000039
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

29
checked on Jul 21, 2019

WEB OF SCIENCETM
Citations

27
checked on Jul 13, 2019

Page view(s)

142
checked on Jul 21, 2019

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.