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|Title:||Magnetic random access memory (MRAM)||Authors:||Zheng, Y.
Magnetic Random Access Memory
Magnetic Tunnel Junction
Spin Transfer Switching
Thermally Assisted MRAM
|Issue Date:||Jan-2007||Citation:||Zheng, Y.,Wu, Y.,Li, K.,Qiu, J.,Han, G.,Guo, Z.,Luo, P.,An, L.,Liu, Z.,Wang, L.,Tan, S.G.,Zong, B.,Liu, B. (2007-01). Magnetic random access memory (MRAM). Journal of Nanoscience and Nanotechnology 7 (1) : 117-137. ScholarBank@NUS Repository. https://doi.org/10.1166/jnn.2007.010||Abstract:||The high density and high speed nonvolatile MTJ MRAMs are reviewed from perspective of the reading and writing operation. The reading operation of the MRAM with different sensing schemes and cell array structures is discussed, in particular the reference resistance generating schemes which are introduced to maximize the cell efficiency and reading reliability. The high density, low cost cross-point cell layout structures are analyzed systematically. The writing operation modes ranging from the half-select, toggle mode, guided SAF direct writing, thermally assisted writing, to the spin transfer switching are investigated both theoretically and experimentally. The thermal factor always plays an important role in determine not only the thermal stability but also the reading and writing reliability. Copyright © 2007 American Scientific Publishers All rights reserved.||Source Title:||Journal of Nanoscience and Nanotechnology||URI:||http://scholarbank.nus.edu.sg/handle/10635/68291||ISSN:||15334880||DOI:||10.1166/jnn.2007.010|
|Appears in Collections:||Staff Publications|
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