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Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.49.11479
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dc.titleComment on "direct evidence for the negative-U nature of the DX center in AlxGa1-xAs"
dc.contributor.authorLi, M.F.
dc.contributor.authorDu, A.Y.
dc.contributor.authorLuo, Y.Y.
dc.contributor.authorChua, S.J.
dc.date.accessioned2014-06-18T06:10:28Z
dc.date.available2014-06-18T06:10:28Z
dc.date.issued1994
dc.identifier.citationLi, M.F., Du, A.Y., Luo, Y.Y., Chua, S.J. (1994). Comment on "direct evidence for the negative-U nature of the DX center in AlxGa1-xAs". Physical Review B 49 (16) : 11479-. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.49.11479
dc.identifier.issn01631829
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/68169
dc.description.abstractThe argument derived in S. Ghosh and V. Kumar's paper [Phys. Rev. B 46, 7533 (1992)] for direct evidence for the negative-U nature of the DX center in AlxGa1-xAs is based on a wrong interpretation of their experimental result since they have not taken into account the very small capture rate of the DX center at 50 K. Their conclusion is therefore not convincing. © 1994 The American Physical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1103/PhysRevB.49.11479
dc.sourceScopus
dc.typeReview
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1103/PhysRevB.49.11479
dc.description.sourcetitlePhysical Review B
dc.description.volume49
dc.description.issue16
dc.description.page11479-
dc.identifier.isiutA1994NK06300083
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