Erratum: "band alignment of yttrium oxide on various relaxed and strained semiconductor substrates" (J. Appl. Phys. (2008) 103 (083702))

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3106056

DC Field	Value
dc.title	Erratum: "band alignment of yttrium oxide on various relaxed and strained semiconductor substrates" (J. Appl. Phys. (2008) 103 (083702))
dc.contributor.author	Chiam, S.Y.
dc.contributor.author	Chim, W.K.
dc.date.accessioned	2014-06-18T05:32:30Z
dc.date.available	2014-06-18T05:32:30Z
dc.date.issued	2009
dc.identifier.citation	Chiam, S.Y., Chim, W.K. (2009). Erratum: "band alignment of yttrium oxide on various relaxed and strained semiconductor substrates" (J. Appl. Phys. (2008) 103 (083702)). Journal of Applied Physics 105 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3106056
dc.identifier.issn	00218979
dc.identifier.uri	http://scholarbank.nus.edu.sg/handle/10635/67918
dc.description.uri	http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3106056
dc.source	Scopus
dc.type	Others
dc.contributor.department	ELECTRICAL & COMPUTER ENGINEERING
dc.description.doi	10.1063/1.3106056
dc.description.sourcetitle	Journal of Applied Physics
dc.description.volume	105
dc.description.issue	7
dc.description.page	-
dc.description.coden	JAPIA
dc.identifier.isiut	000266633500110
Appears in Collections:	Staff Publications

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