Please use this identifier to cite or link to this item: https://doi.org/10.1021/jp808432f
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dc.titleWhite light from an indium zinc oxide/porous silicon light-emitting diode
dc.contributor.authorHu, G.
dc.contributor.authorLi, S.Q.
dc.contributor.authorGong, H.
dc.contributor.authorZhao, Y.
dc.contributor.authorZhang, J.
dc.contributor.authorWijesinghe, T.L.S.L.
dc.contributor.authorBlackwood, D.J.
dc.date.accessioned2014-06-17T08:00:41Z
dc.date.available2014-06-17T08:00:41Z
dc.date.issued2009-01-15
dc.identifier.citationHu, G., Li, S.Q., Gong, H., Zhao, Y., Zhang, J., Wijesinghe, T.L.S.L., Blackwood, D.J. (2009-01-15). White light from an indium zinc oxide/porous silicon light-emitting diode. Journal of Physical Chemistry C 113 (2) : 751-754. ScholarBank@NUS Repository. https://doi.org/10.1021/jp808432f
dc.identifier.issn19327447
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/65060
dc.description.abstractStable white light electroluminescence from a light-emitting diode fabricated from porous silicon with a transparent indium zinc oxide (IZO) top contact layer is presented. High-resolution transmission electron microscopy shows that IZO deposition on porous silicon causes the formation of an amorphous interfacial layer, possibly the source of the additional blue light needed to convert the normally red/green electroluminescence to white. Although the exact cause of the blue emissions has not been identified, a number of possibilities are postulated. An alternative explanation based on junction breakdown is also discussed. © 2009 American Chemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/jp808432f
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.doi10.1021/jp808432f
dc.description.sourcetitleJournal of Physical Chemistry C
dc.description.volume113
dc.description.issue2
dc.description.page751-754
dc.identifier.isiut000262324600041
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