Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3087482
DC FieldValue
dc.titleSurface optical phonon and A1 (LO) in ZnO submicron crystals probed by Raman scattering: Effects of morphology and dielectric coating
dc.contributor.authorLiu, H.F.
dc.contributor.authorTripathy, S.
dc.contributor.authorHu, G.X.
dc.contributor.authorGong, H.
dc.date.accessioned2014-06-17T08:00:15Z
dc.date.available2014-06-17T08:00:15Z
dc.date.issued2009
dc.identifier.citationLiu, H.F., Tripathy, S., Hu, G.X., Gong, H. (2009). Surface optical phonon and A1 (LO) in ZnO submicron crystals probed by Raman scattering: Effects of morphology and dielectric coating. Journal of Applied Physics 105 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3087482
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/65022
dc.description.abstractThe authors studied the surface optical phonon and A1 (LO) in ZnO submicron crystals as well as ZnO single crystals with submicron surface structures by employing ultraviolet Raman scattering. The small variation in Raman frequency of A1 (LO), when the growth condition is changed, is mainly caused by the crystal imperfection via two mechanisms: one is the frequency lowering by native defects and the other is the frequency increasing due to the tilt of c -axis of ZnO crystals away from the surface normal direction that leads to the mixing of A1 (LO) and E1 (LO). The evolution of Raman features, before and after dielectric coatings, in conjunction with the photoluminescence, provides clear-cut evidence for the observation of a surface optical phonon. The frequency of the observed surface mode is lowered by the existence of surface states, and the surface states can be effectively reduced by the dielectric coatings. © 2009 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3087482
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1063/1.3087482
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume105
dc.description.issue5
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000264156300027
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