Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3567549
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dc.titlePhotoluminescence characteristics of ZnCdO/ZnO single quantum well grown by pulsed laser deposition
dc.contributor.authorYang, W.F.
dc.contributor.authorWong, L.M.
dc.contributor.authorWang, S.J.
dc.contributor.authorSun, H.D.
dc.contributor.authorGe, C.H.
dc.contributor.authorLee, A.Y.S.
dc.contributor.authorGong, H.
dc.date.accessioned2014-06-17T07:59:40Z
dc.date.available2014-06-17T07:59:40Z
dc.date.issued2011-03-21
dc.identifier.citationYang, W.F., Wong, L.M., Wang, S.J., Sun, H.D., Ge, C.H., Lee, A.Y.S., Gong, H. (2011-03-21). Photoluminescence characteristics of ZnCdO/ZnO single quantum well grown by pulsed laser deposition. Applied Physics Letters 98 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3567549
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/64974
dc.description.abstractOptical properties of ZnCdO/ZnO single quantum well (SQW) grown on c-sapphire substrate by pulsed laser deposition were investigated. Temperature dependent photoluminescence (PL) measurement was performed from 10 to 300 K to study the carrier localization effect and peak evolution. The LO-phonon replicas up to third order with Huang-Rhys factor of 0.17 were observed. The SQW exhibited very strong PL from the well layer and extremely weak emission from the ZnO barriers, indicating high quality interfaces and highly efficient relaxation. © 2011 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3567549
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1063/1.3567549
dc.description.sourcetitleApplied Physics Letters
dc.description.volume98
dc.description.issue12
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000288808200023
dc.published.statePublished
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