Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.3619815
DC Field | Value | |
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dc.title | Highly reproducible memory effect of organic multilevel resistive-switch device utilizing graphene oxide sheets/polyimide hybrid nanocomposite | |
dc.contributor.author | Wu, C. | |
dc.contributor.author | Li, F. | |
dc.contributor.author | Zhang, Y. | |
dc.contributor.author | Guo, T. | |
dc.contributor.author | Chen, T. | |
dc.date.accessioned | 2014-06-17T07:58:50Z | |
dc.date.available | 2014-06-17T07:58:50Z | |
dc.date.issued | 2011-07-25 | |
dc.identifier.citation | Wu, C., Li, F., Zhang, Y., Guo, T., Chen, T. (2011-07-25). Highly reproducible memory effect of organic multilevel resistive-switch device utilizing graphene oxide sheets/polyimide hybrid nanocomposite. Applied Physics Letters 99 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3619815 | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/64903 | |
dc.description.abstract | The functionalization of graphene oxide (GO) sheets with polyimide (PI) enables the layer-by-layer fabrication of a GO-PI hybrid resistive-switch device and leads to high reproducibility of the memory effect. The current-voltage curves for the as-fabricated device exhibit multilevel resistive-switch properties under various reset voltages. The capacitance-voltage characteristics for a capacitor based on GO-PI nanocomposite indicate that the electrical switching may originate from the charge trapping in GO sheets. The high device-to-device uniformity and unique memory properties of the device make it an attractive candidate for applications in next-generation high-density nonvolatile flash memories. © 2011 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3619815 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | MATERIALS SCIENCE AND ENGINEERING | |
dc.description.doi | 10.1063/1.3619815 | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 99 | |
dc.description.issue | 4 | |
dc.description.page | - | |
dc.description.coden | APPLA | |
dc.identifier.isiut | 000293475500036 | |
Appears in Collections: | Staff Publications |
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