Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/64499
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dc.titleReduced model for the planar solid oxide fuel cell
dc.contributor.authorHe, Z.
dc.contributor.authorLi, H.
dc.contributor.authorBirgersson, E.
dc.date.accessioned2014-06-17T07:47:57Z
dc.date.available2014-06-17T07:47:57Z
dc.date.issued2013-05
dc.identifier.citationHe, Z., Li, H., Birgersson, E. (2013-05). Reduced model for the planar solid oxide fuel cell. Computers and Chemical Engineering 52 : 155-167. ScholarBank@NUS Repository.
dc.identifier.issn00981354
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/64499
dc.description.abstract3D modeling for fuel cells is generally computationally expensive, especially for stacks. In order to reduce computational cost, spatial smoothing over the parallel plain channels in flow fields is introduced and applied to a 3D steady-state isothermal planar solid oxide fuel cell model, which is validated with experiment from literature. The 3D model is reduced to 2D coupled with effective parameters and correlation factors, and then asymptotically reduced to parabolic PDEs and ODEs associated with space marching. The correlation factors, which are derived based on a full set of governing equations for electrokenitics over a cell cross section, can handle not only variations in diffusion pathways due to ribs but also the coupling effect between governing equations. The reduced models are verified with the 3D counterpart in view of global and local properties. Good agreement with a quantitative loss of information is achieved. The reduction in computational cost is investigated. © 2013 Elsevier Ltd.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.compchemeng.2012.12.011
dc.sourceScopus
dc.subjectAsymptotic
dc.subjectFlow field
dc.subjectModel reduction
dc.subjectSolid oxide fuel cell
dc.subjectSpace marching
dc.subjectSpatial smoothing
dc.typeArticle
dc.contributor.departmentCHEMICAL & BIOMOLECULAR ENGINEERING
dc.description.sourcetitleComputers and Chemical Engineering
dc.description.volume52
dc.description.page155-167
dc.description.codenCCEND
dc.identifier.isiut000316675900014
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