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https://doi.org/10.1016/j.matlet.2011.10.099
DC Field | Value | |
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dc.title | Copper nanoparticles embedded in a polyimide film for non-volatile memory applications | |
dc.contributor.author | Gupta, R.K. | |
dc.contributor.author | Kusuma, D.Y. | |
dc.contributor.author | Lee, P.S. | |
dc.contributor.author | Srinivasan, M.P. | |
dc.date.accessioned | 2014-06-17T07:38:10Z | |
dc.date.available | 2014-06-17T07:38:10Z | |
dc.date.issued | 2012-02-01 | |
dc.identifier.citation | Gupta, R.K., Kusuma, D.Y., Lee, P.S., Srinivasan, M.P. (2012-02-01). Copper nanoparticles embedded in a polyimide film for non-volatile memory applications. Materials Letters 68 : 287-289. ScholarBank@NUS Repository. https://doi.org/10.1016/j.matlet.2011.10.099 | |
dc.identifier.issn | 0167577X | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/63670 | |
dc.description.abstract | The charge storage and retention characteristics of a nanoparticle-laden thin polyimide film were investigated for application in non-volatile memory devices. Well-dispersed and uniform sized metallic copper nanoparticles (CuNPs) were formed as embedded entities within the confines of polyimide film that was cast from solution. The nanoparticle-containing films were characterized by X-ray photoelectron spectroscopy, atomic force and scanning electron microscopies. Capacitance-voltage measurements showed that the embedded CuNPs functioned as a floating gate in metal-insulator-semiconductor-type capacitor and exhibited a large hysteresis window of 1.52 V. C-t measurements conducted after applying a charging bias of 5 V showed that the charge was retained beyond 20,000 s. The technique holds promise for developing low-cost processes for memory devices that employ relatively inexpensive materials, and yet demonstrate very good performance. © 2011 Elsevier B.V. All rights reserved. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.matlet.2011.10.099 | |
dc.source | Scopus | |
dc.subject | Copper nanoparticles | |
dc.subject | Nonvolatile memory | |
dc.subject | Polyimide | |
dc.subject | Solution processable | |
dc.type | Article | |
dc.contributor.department | CHEMICAL & BIOMOLECULAR ENGINEERING | |
dc.description.doi | 10.1016/j.matlet.2011.10.099 | |
dc.description.sourcetitle | Materials Letters | |
dc.description.volume | 68 | |
dc.description.page | 287-289 | |
dc.description.coden | MLETD | |
dc.identifier.isiut | 000300480600082 | |
Appears in Collections: | Staff Publications |
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