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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/62867
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dc.titleThe study of piezoelectric effect in wurtzite GaN/InGaN/AlGaN multilayer structures
dc.contributor.authorLiu, W.
dc.contributor.authorTeo, K.L.
dc.contributor.authorLi, M.F.
dc.contributor.authorChua, S.J.
dc.contributor.authorUchida, K.
dc.contributor.authorTokunaga, H.
dc.contributor.authorAkutsu, N.
dc.contributor.authorMatsumoto, K.
dc.date.accessioned2014-06-17T06:55:45Z
dc.date.available2014-06-17T06:55:45Z
dc.date.issued1998-06-15
dc.identifier.citationLiu, W.,Teo, K.L.,Li, M.F.,Chua, S.J.,Uchida, K.,Tokunaga, H.,Akutsu, N.,Matsumoto, K. (1998-06-15). The study of piezoelectric effect in wurtzite GaN/InGaN/AlGaN multilayer structures. Journal of Crystal Growth 189-190 : 648-651. ScholarBank@NUS Repository.
dc.identifier.issn00220248
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62867
dc.description.abstractBy using photovoltaic spectroscopy and contactless electroreflectance spectroscopy, large electric field was found to exist in wurztite GaN/InGaN/AlGaN multilayer structures. The electric field strengths in the GaN layer and the AlGaN layer were obtained from the analysis of the Franz-Keldysh oscillations in contactless electroreflectance spectra. These electric fields were attributed to be induced by the piezoelectric effect in wurztite nitride systems. © 1998 Elsevier Science B.V. All rights reserved.
dc.sourceScopus
dc.subjectContactless electroreflectance
dc.subjectFranz-Keldysh oscillations
dc.subjectGaN
dc.subjectPhotovoltaic spectroscopy
dc.subjectPiezoelectric effect
dc.subjectResidual strain
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleJournal of Crystal Growth
dc.description.volume189-190
dc.description.page648-651
dc.description.codenJCRGA
dc.identifier.isiutNOT_IN_WOS
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