Please use this identifier to cite or link to this item: https://doi.org/10.1007/s003390051056
DC FieldValue
dc.titleScanning tunnelling microscopy imaging and modification of hydrogen-passivated Ge(100) surfaces
dc.contributor.authorLu, Y.F.
dc.contributor.authorMai, Z.H.
dc.contributor.authorSong, W.D.
dc.contributor.authorChim, W.K.
dc.date.accessioned2014-06-17T06:54:16Z
dc.date.available2014-06-17T06:54:16Z
dc.date.issued2000-04
dc.identifier.citationLu, Y.F., Mai, Z.H., Song, W.D., Chim, W.K. (2000-04). Scanning tunnelling microscopy imaging and modification of hydrogen-passivated Ge(100) surfaces. Applied Physics A: Materials Science and Processing 70 (4) : 403-406. ScholarBank@NUS Repository. https://doi.org/10.1007/s003390051056
dc.identifier.issn09478396
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62734
dc.description.abstractScanning tunnelling microscopy (STM) study and modification of hydrogen (H)-passivated Ge(100) surfaces have been investigated. Thermal oxidation procedures were used to minimise surface roughness. Ge samples were passivated in HF solution after thermal oxidation. STM and atomic force microscope (AFM) imaging showed that, using HF etching after thermal oxidation, we can obtain a natural H-passivated topographically and chemically flat Ge(100) surface. The root-mean-square (rms) roughness of a H-passivated Ge(100) surface measured both by STM and AFM is less than 2 angstrom. Electric properties of H-passivated Ge(100) surfaces were studied by scanning tunnelling spectroscopy (STS) in nitrogen ambient. STS showed that the H-passivated Ge surfaces were not pinned. Modification on H-passivated Ge(100) surfaces was carried out using STM by applying an electric voltage between the sample and tip in air. Modified features were characterised by STM and AFM imaging. On the H-passivated Ge(100) surfaces, stable, low-voltage, nanometer-scale modified features can be produced.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1007/s003390051056
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.contributor.departmentDATA STORAGE INSTITUTE
dc.description.doi10.1007/s003390051056
dc.description.sourcetitleApplied Physics A: Materials Science and Processing
dc.description.volume70
dc.description.issue4
dc.description.page403-406
dc.description.codenAPAMF
dc.identifier.isiut000086648400007
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