1. ScholarBank@NUS
  2. 1. Staff
  3. Staff Publications
Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/62702
DC FieldValue
dc.titleRELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.
dc.contributor.authorLing, C.H.
dc.contributor.authorKwok, C.Y.
dc.contributor.authorPrasad
dc.contributor.authorK.
dc.date.accessioned2014-06-17T06:53:57Z
dc.date.available2014-06-17T06:53:57Z
dc.date.issued1985-05
dc.identifier.citationLing, C.H.,Kwok, C.Y.,Prasad,K. (1985-05). RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.. Physica Status Solidi (A) Applied Research 89 (1) : k39-k43. ScholarBank@NUS Repository.
dc.identifier.issn00318965
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62702
dc.description.abstractThe authors report results on the effects of substrate temperature and thermal annealing on the hydrogen content of films prepared in the temperature range 50 to 300 degree C. Incorporated hydrogen effects the etch rate of plasma-enhanced CVD silicon nitride films. The etch rate anomaly observed previously can be explained in terms of the variation of H content over the range of deposition temperatures. 23 to 28% can be annealed out after a 21 h 400 degree C heat treatment.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitlePhysica Status Solidi (A) Applied Research
dc.description.volume89
dc.description.issue1
dc.description.pagek39-k43
dc.description.codenPSSAB
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.