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Please use this identifier to cite or link to this item: https://doi.org/10.1088/0022-3727/27/9/020
DC FieldValue
dc.titleProposing and modelling of a new unipolar transistor
dc.contributor.authorSheng, Hanyu
dc.contributor.authorChua, Soo-Jin
dc.date.accessioned2014-06-17T06:53:30Z
dc.date.available2014-06-17T06:53:30Z
dc.date.issued1994
dc.identifier.citationSheng, Hanyu, Chua, Soo-Jin (1994). Proposing and modelling of a new unipolar transistor. Journal of Physics D: Applied Physics 27 (9) : 1946-1951. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/27/9/020
dc.identifier.issn00223727
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62660
dc.description.abstractA new unipolar transistor has been proposed. Modelling was carried out using a semiclassical transport theory, which included quantum interference and multiple scattering by means of a correlation function and taking account of the mean free path. The direct current properties of the new transistor are calculated and analyzed. The results show that a common-emitter current gain of 80 can be expected.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1088/0022-3727/27/9/020
dc.description.sourcetitleJournal of Physics D: Applied Physics
dc.description.volume27
dc.description.issue9
dc.description.page1946-1951
dc.description.codenJPAPB
dc.identifier.isiutA1994PH52300020
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