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| Title: | Luminescence properties of ZnSe/ZnS(h 1 1)A low dimensional structures | Authors: | Tomasini, P. Arai, K. Lu, F. Cho, M.W. Zhu, Z.Q. Yao, T. Wu, Y.H. Sekiguchi, T. Suezawa, M. Shen, M.Y. Goto, T. |
Keywords: | Epitaxy Piezoelectricity Quantum confined Stark effect Quantum wells ZnS ZnSe |
Issue Date: | 1998 | Citation: | Tomasini, P.,Arai, K.,Lu, F.,Cho, M.W.,Zhu, Z.Q.,Yao, T.,Wu, Y.H.,Sekiguchi, T.,Suezawa, M.,Shen, M.Y.,Goto, T. (1998). Luminescence properties of ZnSe/ZnS(h 1 1)A low dimensional structures. Journal of Crystal Growth 184-185 : 343-346. ScholarBank@NUS Repository. | Abstract: | The power dependence and the temperature dependence of the luminescence intensity of ultra-thin pseudomorphic ZnSe quantum wells, grown on high index GaP substrates were investigated. A blue shift of PL with power excitation is mainly related to the band filling of interfacial ZnSe clusters while it is found that the piezoelectric field has only a small influence. Luminescence spectra of ultra-thin ZnSe/ZnS single quantum wells are characterized by an excitation dependent excitonic localization phenomenon. © 1998 Elsevier Science B.V. All rights reserved. | Source Title: | Journal of Crystal Growth | URI: | http://scholarbank.nus.edu.sg/handle/10635/62397 | ISSN: | 00220248 |
| Appears in Collections: | Staff Publications |
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