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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/62332
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dc.titleInfluence of Si doping on the infrared reflectance characteristics of GaN grown on sapphire
dc.contributor.authorHou, Y.T.
dc.contributor.authorFeng, Z.C.
dc.contributor.authorChua, S.J.
dc.contributor.authorLi, M.F.
dc.contributor.authorAkutsu, N.
dc.contributor.authorMatsumoto, K.
dc.date.accessioned2014-06-17T06:49:53Z
dc.date.available2014-06-17T06:49:53Z
dc.date.issued1999-11-15
dc.identifier.citationHou, Y.T.,Feng, Z.C.,Chua, S.J.,Li, M.F.,Akutsu, N.,Matsumoto, K. (1999-11-15). Influence of Si doping on the infrared reflectance characteristics of GaN grown on sapphire. Applied Physics Letters 75 (20) : 3117-3119. ScholarBank@NUS Repository.
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62332
dc.description.abstractSi-doped GaN films grown on sapphire are investigated by infrared reflectance. A damping behavior of the interference fringes is observed, and interpreted to be due to the presence of an interface layer between the film and the substrate. A theoretical calculation using a two-layer model to take into account the interface layer resulted in this damping in agreement with the experiment. The damping behavior and an improvement of interface properties by Si incorporation are demonstrated. © 1999 American Institute of Physics.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleApplied Physics Letters
dc.description.volume75
dc.description.issue20
dc.description.page3117-3119
dc.description.codenAPPLA
dc.identifier.isiutNOT_IN_WOS
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