Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/62296
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dc.titleHybrid Gauss-Newton-simulated annealing optimizer for extraction of MESFET equivalent circuit elements
dc.contributor.authorLeong, M.S.
dc.contributor.authorKooi, P.S.
dc.contributor.authorYeo, T.S.
dc.contributor.authorOoi, B.L.
dc.date.accessioned2014-06-17T06:49:31Z
dc.date.available2014-06-17T06:49:31Z
dc.date.issued1993-01-01
dc.identifier.citationLeong, M.S.,Kooi, P.S.,Yeo, T.S.,Ooi, B.L. (1993-01-01). Hybrid Gauss-Newton-simulated annealing optimizer for extraction of MESFET equivalent circuit elements. Microwave and Optical Technology Letters 6 (8) : 461-466. ScholarBank@NUS Repository.
dc.identifier.issn08952477
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62296
dc.description.abstractA new optimizer is presented for the extraction of the small-signal equivalent circuit elements (X) of a GaAs FET from its measured scattering (S) parameters. The approach is a combination of the damped Gauss-Newton method, for the least-squares fitting of the S parameters, and the random search generalized simulated annealing (GSA). Novel features of the proposed approach include (i) an improved Kondoh step-by-step optimization of the objective functions grouped according to their sensitivity to variation of key equivalent circuit parameters (X), and (ii) exploitation of the advantages derived from a transformation of the objective functions from scattering parameters to impedance parameters.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleMicrowave and Optical Technology Letters
dc.description.volume6
dc.description.issue8
dc.description.page461-466
dc.description.codenMOTLE
dc.identifier.isiutNOT_IN_WOS
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