1. ScholarBank@NUS
  2. 1. Staff
  3. Staff Publications
Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/62139
DC FieldValue
dc.titleEnhancement of electroluminescence properties in delta-doped quantum well of bipolar resonant tunneling diode
dc.contributor.authorSheng, Hanyu
dc.contributor.authorChua, Soo-Jin
dc.date.accessioned2014-06-17T06:47:49Z
dc.date.available2014-06-17T06:47:49Z
dc.date.issued1994
dc.identifier.citationSheng, Hanyu,Chua, Soo-Jin (1994). Enhancement of electroluminescence properties in delta-doped quantum well of bipolar resonant tunneling diode. Proceedings of SPIE - The International Society for Optical Engineering 2321 : 104-106. ScholarBank@NUS Repository.
dc.identifier.isbn0819416525
dc.identifier.issn0277786X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62139
dc.description.abstractAn analytical model of δ-doped quantum well is developed. The results show that by using δ-doped quantum well structure, the area densities of the electrons and holes in the conduction and valence bands respectively can be increased by 4 orders of magnitudes compared with the n-i-p structure. Therefore the electroluminescence enhancement can be expected for the bipolar resonant tunneling diode of δ-doped quantum well.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleProceedings of SPIE - The International Society for Optical Engineering
dc.description.volume2321
dc.description.page104-106
dc.description.codenPSISD
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.