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https://scholarbank.nus.edu.sg/handle/10635/62130
DC Field | Value | |
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dc.title | Electron-beam irradiation-induced gate oxide degradation | |
dc.contributor.author | Cho, B.J. | |
dc.contributor.author | Chong, P.F. | |
dc.contributor.author | Chor, E.F. | |
dc.contributor.author | Joo, M.S. | |
dc.contributor.author | Yeo, I.S. | |
dc.date.accessioned | 2014-06-17T06:47:43Z | |
dc.date.available | 2014-06-17T06:47:43Z | |
dc.date.issued | 2000-12 | |
dc.identifier.citation | Cho, B.J.,Chong, P.F.,Chor, E.F.,Joo, M.S.,Yeo, I.S. (2000-12). Electron-beam irradiation-induced gate oxide degradation. Journal of Applied Physics 88 (11) : 6731-6735. ScholarBank@NUS Repository. | |
dc.identifier.issn | 00218979 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/62130 | |
dc.description.abstract | Gate oxide degradation induced by electron-beam irradiation has been studied. A large increase in the low-field excess leakage current was observed on irradiated oxides and this was very similar to electrical stress-induced leakage currents. Unlike conventional electrical stress-induced leakage currents, however, electron-beam induced leakage currents exhibit a power law relationship with fluency without any signs of saturation. It has also been found that the electron-beam neither accelerates nor initiates quasibreakdown of the ultrathin gate oxide. Therefore, the traps generated by electron-beam irradiation do not contribute to quasibreakdown, only to the leakage current. © 2000 American Institute of Physics. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.sourcetitle | Journal of Applied Physics | |
dc.description.volume | 88 | |
dc.description.issue | 11 | |
dc.description.page | 6731-6735 | |
dc.description.coden | JAPIA | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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