Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/62130
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dc.titleElectron-beam irradiation-induced gate oxide degradation
dc.contributor.authorCho, B.J.
dc.contributor.authorChong, P.F.
dc.contributor.authorChor, E.F.
dc.contributor.authorJoo, M.S.
dc.contributor.authorYeo, I.S.
dc.date.accessioned2014-06-17T06:47:43Z
dc.date.available2014-06-17T06:47:43Z
dc.date.issued2000-12
dc.identifier.citationCho, B.J.,Chong, P.F.,Chor, E.F.,Joo, M.S.,Yeo, I.S. (2000-12). Electron-beam irradiation-induced gate oxide degradation. Journal of Applied Physics 88 (11) : 6731-6735. ScholarBank@NUS Repository.
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62130
dc.description.abstractGate oxide degradation induced by electron-beam irradiation has been studied. A large increase in the low-field excess leakage current was observed on irradiated oxides and this was very similar to electrical stress-induced leakage currents. Unlike conventional electrical stress-induced leakage currents, however, electron-beam induced leakage currents exhibit a power law relationship with fluency without any signs of saturation. It has also been found that the electron-beam neither accelerates nor initiates quasibreakdown of the ultrathin gate oxide. Therefore, the traps generated by electron-beam irradiation do not contribute to quasibreakdown, only to the leakage current. © 2000 American Institute of Physics.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume88
dc.description.issue11
dc.description.page6731-6735
dc.description.codenJAPIA
dc.identifier.isiutNOT_IN_WOS
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