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Please use this identifier to cite or link to this item: https://doi.org/10.1007/BF00304244
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dc.titleElectroluminescence model of bipolar resonant tunnelling diode
dc.contributor.authorSheng, H.
dc.contributor.authorChua, S.-J.
dc.date.accessioned2014-06-17T06:47:34Z
dc.date.available2014-06-17T06:47:34Z
dc.date.issued1994-04
dc.identifier.citationSheng, H., Chua, S.-J. (1994-04). Electroluminescence model of bipolar resonant tunnelling diode. Optical and Quantum Electronics 26 (4) : 397-404. ScholarBank@NUS Repository. https://doi.org/10.1007/BF00304244
dc.identifier.issn03068919
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62115
dc.description.abstractAn electroluminescence model of a bipolar resonant tunnelling diode is carried out. The current is the sum of the electron and hole current. The electron and hole density at the resonant level of a quantum well are related to the electron and hole current, respectively. A radiative recombination rate formula is derived from the matrix element, electron and hole distribution. The results show that a large on-off ratio of light output can be achieved by the bipolar resonant tunnelling diode. © 1994 Chapman & Hall.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1007/BF00304244
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1007/BF00304244
dc.description.sourcetitleOptical and Quantum Electronics
dc.description.volume26
dc.description.issue4
dc.description.page397-404
dc.description.codenOQELD
dc.identifier.isiutA1994NX29600004
Appears in Collections:Staff Publications

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